Northwest-AI-Hub

Western Digital

Western Digital brings to the Hub proven capabilities in developing test vehicles (1R, 1T1R, materials sciences) for a variety of memory technologies, including magnetic tunnel junction (MTJ), ferroelectrics, phase change memory, RRAM, and oxide semiconductors. WD has successfully demonstrated memory test chip integration with 28-nm CMOS on 300-mm wafers in its facility in San Jose, with full BEOL with critical CD of 20 nm. A recent 20 kbit MRAM test vehicle yields over 99% and is tuned specifically for stochastic computing. Multiple levels of planarized metals at BEOL can be fabricated after memory integration with foundry CMOS. WD's engineers collaborate with Hub partners to further develop project proposals using universal memory test vehicles with peripheral and readout circuits.

Western Digital Silicon Valley Technology Center and Research Fabrication Facility

The WD Research fabrication facility has a legacy in Silicon Valley dating back nearly 70 years. This organization has driven innovation in data storage hardware ever since the seminal invention of the hard disk drive RAMAC on its campus in 1957. WD is proud to continue this heritage today by supporting its SOTA nanofabrication center focused on exploring and developing the latest solid state memory materials, advanced processes, and architectures for its future products. The organization has a proven track record of recognizing breakthrough opportunities in technology and fostering them for successful commercial product introduction. (i.e. GMR, TMR, perpendicular recording, Helium drove storage, etc.).

Today, the team focuses on creating transformational breakthroughs in memory technology to overcome the perceived “memory wall” facing the CMOS ecosystem with traditional memory such as SRAM and DRAM. The company’s long history in magnetic device and materials innovation positions it to deploy its expertise and resources in magnetic nanofabrication for MRAM research. The WD research team has contributed significantly to the field of magnetic device and MRAM for many decades and includes the individual who performed the seminal spin torque transfer (STT) experiments resulting in the STT-MRAM. WD’s facilities, workforce, resources, and capabilities to develop MRAM and all its varieties are ideal for studying and integrating many forms of emerging memory including phase change, resistive and ferroelectric memory technologies.

The WD advantage is its long heritage in innovation, with:

  • Experienced research team covering materials, nano-fabrication, device physics modeling and characterization
  • Recognized as world leading research organization in magnetic device and its applications to data storage. 
  • Proven track record of consistently transitioning innovative technologies from the lab into manufacturing.